This search combines search strings from the content search (i.e. "Full Text", "Author", "Title", "Abstract", or "Keywords") with "Article Type" and "Publication Date Range" using the AND operator.
Beilstein J. Nanotechnol. 2016, 7, 1783–1793, doi:10.3762/bjnano.7.171
Figure 1: Color plot of the RAS signal during reactive ion etching (RIE) of a partially masked laser substrat...
Figure 2: Transients of the average reflected intensity in arbitrary units (a.u.) at a photon energy of 2.5 e...
Figure 3: Scanning electron microscopy (SEM) image of a facet of a lithographically masked and then reactive-...
Figure 4: SIMS intensity – sputter time profile of the CsAl-signal with logarithmic scaling. Displayed are pr...
Figure 5: Illustrations of the wafer layout and sample design (required in the example) to monitor the etch p...
Figure 6: Single transients of the average reflected intensity (top) and the RAS signal (bottom) at 2.4 eV of...
Figure 7: Scanning electron microscope (SEM) images of a film waveguide lens on a laser ridge. (a) Tilted top...
Beilstein J. Nanotechnol. 2011, 2, 333–338, doi:10.3762/bjnano.2.39
Figure 1: Top: AFM images of samples grown at a temperature of T = 527 °C and a nominal coverage of 3 ML, but...
Figure 2: PL spectra of GaSb dots grown on GaAs with two different V/III ratios of 1.5/1 and 1/1, respectivel...
Figure 3: PL peak position for dots with larger diameter (at a V/III ratio 1.5/1) and smaller diameter (at a ...
Figure 4: PL spectra of dots grown with a V/III ratio of 1/1 and 1.5/1, but at different growth temperatures....
Figure 5: Output pulse power versus injection current density of a laser with a 1000 µm long and 30 µm wide a...